AM2319P these miniature surf ace mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application. ?low r ds(on) provides higher efficiency and extends battery life ? fast switch ? low gate charge ? miniature sot-23 surface mount package saves board space notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol m aximum units t <= 5 sec 250 steady-state 285 thermal resistance ratings parame te r o c/w maximum junction-to-ambient a r thja d s g symbol maximum units v ds -30 v gs 20 t a =25 o c-2.1 t a =70 o c-1.7 i dm 10 i s -0.4 a t a =25 o c1.25 t a =70 o c0.8 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w v ds (v) r ds ( on ) ( ? )i d (a) 0.20 @ v gs = -10 v -2.1 0.30 @ v gs = -4.5v -1.7 -30 product summary 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max v ds = -24 v, v gs = 0 v -1 v ds = -24 v, v gs = 0 v, t j = 55 o c -10 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -1.30 v on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -3 a v gs = -10 v, i d = -2.1 a 0.20 v gs = -4.5 v, i d = -1.7 a 0.30 forward tranconductance a g fs v ds = -5 v, i d = -2.1 a 2 s diode forward voltage v sd i s = -0.4 a, v gs = 0 v -0.70 -1.2 v total gate charge q g 3.4 gate-source charge q gs 0.8 gate-drain charge q gd 1.5 turn-on delay time t d(on) 8 ris e time t r 18 turn-off delay time t d(off) 52 fall-time t f 39 specifications (t a = 25 o c unless otherwise noted) static te st conditions zero gate voltage drain current i dss a symbol paramete r limits nc v ds = -10 v, i d = -1.1 a, r g = 50 ? , v gen = -10 v unit drain-source on-resistance a r ds(on) ? ns dynamic b v ds = -10 v, v gs = -5 v, i d = -2.1 a 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM2319P product specification
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